| 摘要 |
PURPOSE:To eliminate the formation of a precipitation nucleus by a method wherein a chemical vapor growth substance which is deposited in advance on a substrate other than a semiconductor substrate by a chemical vapor deposition (CVD) method is attached to the surface of the semiconductor substrate so that the semiconductor substrate can be stuck. CONSTITUTION:At a vertical CVD furnace a polysilicon layer 2 is deposited on a susceptor 3 where a silicon wafer is not mounted; then, a silicon wafer 1 is mounted on the deposited polysilicon layer 2 and is heated; the polysilicon layer 2 is jointed (stuck) to the silicon wafer (silicon substrate) 1. When the polysilicon layer 2 on the susceptor 3 is joined to the silicon wafer 1, the silicon wafer 1 is placed on the polysilicon layer 2 and is heated by rapidly raising the temperature; crystals are joined locally in a short time by an annealing process; the temperature is lowered rapidly. By this method, no precipitation nucleus is produced on the semiconductor substrate; a gettering effect can be obtained without causing a precipitation defect during a subsequent process.
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