| 摘要 |
PURPOSE:To realize the control of the concentration in an epitaxial layer by a method wherein a first-stage epitaxial growth layer is formed at a low pressure in such a way that its concentration lies between the surface concentration of a buried diffused layer and the desired concentration of the epitaxial growth layer while a second-stage epitaxial growth layer with the desired concentration is formed at atmospheric pressure. CONSTITUTION:A silicon single-crystal substrate, where a high-concentration buried diffused layer 2 is formed on the surface of the silicon single-crystal substrate 1, is prepared; a first-stage epitaxial growth layer 3 is formed on this silicon single-crystal substrate at a low pressure. Then, a second-stage epitaxial growth layer 4 is formed at atmospheric pressure on the silicon single- crystal substrate where the first-stage epitaxial growth layer has been formed. By this method, it is possible to prevent a defect that the epitaxial growth layer cannot be controlled by an autodoping process from the high-concentration buried diffused layer 2.
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