| 摘要 |
PURPOSE:To carry out a wire bonding process without destroying characteristics and reliability by making a part where a conductive line of a semiconductor laser pellet is treated by the wire bonding process to be 170-250mum thick. CONSTITUTION:A semiconductor laser pellet 1 allows a side of an emission part 21 to be fused to a heat absorber and also allows a conductive line 5 to be treated by the wire bonding process at a part 11 which is located at the opposite side of an oscillation part 21 and is apart from an active region 2. In such a case, the thickness (t) of the laser pellet at the bonding location 11 is set up to 170-250mum. In this way, the above approach helps prevent characteristic variation that likely takes place before and after carrying out the wire bonding or avoid an adverse effect on reliability due to the conditions of the wire bonding process.
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