| 摘要 |
PURPOSE:To reduce the deterioration in various characteristics especially in high temperature side, i.e., assuring high withstand voltage, low dark current, high bright and dark ratio and stable temperature characteristics by a method wherein the thickness of a barrier layer is specified within specific range while the ratio between the thickness of individual electrode and the barrier layer is specified not to exceed specific value. CONSTITUTION:The title photosensor is provided with at least one or more individual electrodes 2 arranged on a substrate, a barrier layer 3 formed on the electrode 2, a photoelectric semiconductor layer 4 formed on the barrier layer 3 and the second electrode 6 holding the barrier layer 3 and the photoelectric semiconductor layer 4 between the individual electrodes 2 and the second electrode 6. In such a photosensor, the thickness of barrier layer 3 is specified to exceed 30 Angstrom and not to exceed 200 Angstrom while the thickness of individual electrodes 2 not to exceed four times of the thickness of barrier layer 3. For example, said barrier layer 3 is composed of an insulating layer, a high resistance layer or a material layer with band gap energy higher than that of photoelectric semiconductor layer 4. Through these procedures, the thickness of barrier layer 3 near the edge parts of individual electrodes 2 can be prevented from being made extremely thinner than that of other parts to reduce the deterioration in various characteristics of photosensor. |
