| 摘要 |
PURPOSE:To manufacture the title photodetector in high yield reducing the deterioration in characteristics especially in high temperature side, i.e., assuring high withstand voltage, low dark current, high bright and dark ratio and stable temperature characteristics by means of specifying the thickness of individual electrodes within specific range. CONSTITUTION:The title photodetector is provided with an least one or more individual electrodes 2 arranged on a substrate 1, a barrier layer 3 formed on the electrodes 2, a photoelectric semiconductor layer 4 formed on the barrier layer 3 and the second electrode 6 holding the barrier layer 3 and the photoelectric semiconductor layer 4 between the individual electrodes 2 and the second electrode 6. In such a photodetector, the thickness of barrier layer 3 is specified to exceed 30 Angstrom and not to exceed 200 Angstrom while the thickness of individual electrodes 2 not to exceed four times of the thickness of barrier layer 3. For example, said barrier layer 3 is composed of an insulating layer, a high resistance layer or a material layer with band gap energy higher than that of photoelectric semiconductor layer 4. Through these procedures, the step difference in edge parts of respective individual electrodes 2 is reduced to prevent the thickness of barrier layer 3 near the edge parts of individual electrodes 2 from being made extremely thinner than that of other parts to reduce the deterioration in various characteristics of photosensor. |
