| 摘要 |
PURPOSE:To uniformize the thickness of the impurity layer of a wafer and the concn. of the impurities by setting an inner tube housing plural semiconductor wafers and having an opening in an outer tube, and allowing the impurities in the gas introduced into the outer tube to diffuse into the wafers. CONSTITUTION:The furnace core tube for vapor growth is formed with the outer tube 1 into which the gas contg. impurities is introduced and the inner tube 2 to be set in the outer tube 1. Plural semiconductor wafers 14 are housed in the inner tube 2, and the openings 17 are provided to the inner tube. The gas contg. impurities is introduced into the outer tube 1 from a gas inlet pipe 4, passed through the openings 17, and uniformly spread over the wafers 14. Accordingly, the impurities are uniformly diffused.
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