| 摘要 |
PURPOSE:To easily form an ohmic contact whose low resistance value is stable by a method wherein, after a silicon monocrystalline layer has been grown, a germanium layer doped with an impurity is deposited in succession and an ohmic contact electrode is formed on the silicon monocrystalline layer via the germanium layer. CONSTITUTION:A silicon monocrystalline layer 13 is grown hetero-epitaxially on a monocrystalline insulating layer 12; in succession, a germanium layer 14 doped with an impurity is deposited on the silicon monocrystalline layer 13; an ohmic contact electrode 15 is formed on the silicon monocrystalline layer 13 via the germanium layer 14. For example, the magnesia spinel monocrystalline insulating layer 12 and the silicon monocrystalline layer 13 have been grown on a silicon monocrystalline substrate 11; in succession, the germanium layer 14 doped with As is deposited inside an identical reaction chamber. Then, after the semiconductor substrate 11 has been taken out from a growth system and the Au-Sb layer 15 has been deposited on the germanium layer 14, a resist mask 16 is formed and is etched; the Au-Sb layer 15 and the germanium layer 14 are patterned and, furthermore, are heat-treated so as to form an alloy region 15A.
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