| 摘要 |
PURPOSE:To grow the film thickness of a compd. semiconductor by liq. phase epitaxy in a short time by bringing a semiconductor substrate into contact with the semiconductor compd. melt which is circulated from the high-temp. zone of a growth furnace to the low-temp. zone. CONSTITUTION:A thin film forming jig is inserted into the reaction tube 7 set in an epitaxy furnace 1 having the high-temp. and low-temp. zones. A growth soln. 10, wherein a compd. to be used as the raw material of the thin film is dissolved, is introduced into the jig, and a substrate 9 is brought into contact with the soln. 10 to grow a thin film on the substrate surface. In this case, a GaAs crystal substrate is used as the substrate 9, and Ga is filled in the passage 11 of the soln. 10. A raw material crystal part 12 contg. a GaAs polycrystal 13 to be used as the raw material and a mixed crystal soln. part 14 contg. Ga and Al mixed in the soln. 10 are provided in the other passage. The soln. 10 is circulated by the piston 15 provided to the jig from the high- temp. part to the low-temp. part. Accordingly, the thin film of GaAlAs can be efficiently and rapidly grown while circulating the soln. 10.
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