| 摘要 |
PURPOSE:To obtain the title high-purity compd. semiconductor having excellent characteristics by evacuating the inside of a furnace, and then baking the raw material in the furnace to remove the impurities deposited on the material surface. CONSTITUTION:Plural elements are selected from groups IIb, IIIb, IVb, Vb, and VIb elements of the periodic table to obtain the raw material constituting the compd. semiconductor. The raw material or the raw material and a liq. sealant are filled in the reaction vessel provided in the furnace. The inside of the furnace is evacuated, the materials are heated to the temp. which is lower than the synthesis temp. and the softening temp. of the liq. sealant to vaporize the impurities deposited on the raw material, etc. The materials are then heated to the synthesis temp. to synthesize a compd. semiconductor.
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