| 摘要 |
PURPOSE:To realize the formation of a contact hole whose selectivity and anisotropy are strong and which can be wet-etched in a short time by implanting ions of arsenic of phosphorus into silicon dioxide contained in a part to be removed. CONSTITUTION:A silicon dioxide film 1 is formed on the surface of a semiconductor substrate 2; the silicon dioxide film 1 is patterned by using a mask material 3; ions Of arsenic or phosphorus are implanted. After that, a part 4, at said silicon dioxide film 1, where the ions of arsenic or phosphorus have been implanted, is wet-etched; the silicon dioxide film 1 is removed. For example, the silicon dioxide film 1 is formed on the semiconductor substrate 2 by a thermal oxidation method; only a part where a contact hole is to be made is exposed, while the remaining part is covered with the mask, material 3; the ions of arsenic are implanted in such a way that they can reach the semiconductor substrate 2. Then, after the contact hole has been made by wet-etching the silicon dioxide film 1 by using a solution of buffered hydrofluoric acid or the like, a material wiring part 5 is formed by evaporating a metal or the like.
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