| 摘要 |
PURPOSE:To reduce interface level which is caused between an insulating film and a semiconductor substrate, to stabilize the interface in a region where a depletion layer is spread and to prevent the withstanding-voltage characteristic from deteriorating before and after the evaporation by a method wherein, after a contact window has been opened in the insulating film, an electrode metal is evaporated by keeping the state that a photoresist material is formed to be a prescribed shape on the insulating film. CONSTITUTION:When a planar semiconductor device having a PN junction is to be formed on the main surface of a semiconductor substrate 2, a contact window 5 for the formation of an electrode is opened at a part of an insulating film 6 on the surface of a region, at the semiconductor device, where a depletion layer is spread mainly when a reverse voltage is applied; after that, an island-shaped or a stripe-shaped pattern whose width is less than about 100 mum is formed by means of a photoresist layer 7 at equal spaces toward the outer circumference; by keeping this state, an electrode metal film 8 is formed. For example, after a P-type diffused layer 3 and an N<+> diffused layer 4 have been formed on an N-type silicon substrate 1 and the contact window 5 has been opened at a part where an electrode is to be formed on the insulating oxide film 6, an island-shaped or a stripe-shaped photoresist pattern 7 whose width is less than about 100 mum is formed on the insulating oxide film 6; by keeping this state, the electrode metal film 8 is formed by a vacuum evaporation method.
|
