| 摘要 |
PURPOSE:To eliminate the uneven thickness of a crystalline layer formed on a mesa stripe at its both ends by a method wherein a downward-protruding means 33 to prevent the shift of a gas is installed at the circumference of a region to place a substrate on a substrate-mounting stage. CONSTITUTION:The following are installed inside a vacuum chamber: a crucible- shaped hot-wall 34 where a material 36 for a source is accommodated and whose side wall is heated; a substrate-mounting stage 32 which is situated on the hot wall 34 and where a substrate 31 is placed face to face with the material 36 for the source inside the hot wall 34. At this system, a downward-protruding means 33 to prevent the shift of an evaporating gas is installed at the circumference of a region to place the substrate 32 on said substrate-mounting stage 32. With this setup, the vapor of the source inside the hot wall is not shifted along the surface of the substrate toward an opening of the vacuum chamber; the vapor of the source is evaporated uniformly at both ends of a mesa-stripe structure formed on the substrate; as a result, it is possible to form a buried layer of uniform thickness on the mesa stripe and to form a semiconductor laser device of high reliability.
|
