| 摘要 |
<p>PURPOSE:To obtain a metal thin-film resistor whose stability is high, whose resistance-temperature coefficient is low, whose area resistance value can be obtained in a wide range, whose reproducibility during a production process is good by constituting the resistor by means of an Ni-Cr-Al-Si-type thin film according to a prescribed composition ratio. CONSTITUTION:A metal thin-film resistor is constituted by an alloy composed of nickel, chromium, aluminum and silicon. The composition ratio of each element is prescribed as follows: the ratio of chromium/nickel within the range between 0.15 and 0.74 wt.%; aluminum within the range between 0.4 and 4.0 wt.%; silicon within the range between 0.2 and 5.0 wt.%; the total of aluminum and silicon within the range between 1.5 and 8.0 wt.%. In order to transform the alloy according to said composition into the resistor, a thin film is formed on a ceramic or glass substrate by means of, e.g., a cathode sputtering method, an electron beam, an evaporation method by heating the resistor, or the like.</p> |
