发明名称 |
PRODUCTION OF SILICON CARBIDE POWDER |
摘要 |
PURPOSE:To produce SiC powder of high-purity and having uniform particle diameter by allowing SiO2 to react with C in plasma flames in a method for performing the reaction. CONSTITUTION:A couple of electrodes 2, 3 provided on the inside of a reaction vessel 1 are connected with a power source 5 and plasma flames 4 are generated in the space between both electrodes. At least one of both electrodes, for example the electrode 2 is made of a hollow electrode and the powder 7 of a mixed raw material consisting of arbitrary amount of SiO2 and C is introduced into the plasma flames 4 via the hole 2a of the hollow part of the electrode 2 from a microfeeder 6 together with carrier gas incorporated in a cylinder 8. SiO2 powder is allowed to react with C powder to produce SiC and CO and this produced SiC powder is carried to the upper part by both carrier gas and CO of reaction gas and collected in a cyclone 9. |
申请公布号 |
JPS63147812(A) |
申请公布日期 |
1988.06.20 |
申请号 |
JP19860294193 |
申请日期 |
1986.12.10 |
申请人 |
NIPPON SHEET GLASS CO LTD;KAWASAKI STEEL CORP |
发明人 |
YOSHIYAGAWA MITSUGI;MIYATA KUNIO;ISHIZAKI MASATO;KAWAHARA TETSUO;ARAYA MATAO;SAKAGUCHI YASUHIKO |
分类号 |
C01B31/36 |
主分类号 |
C01B31/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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