| 摘要 |
PURPOSE:To decrease threshold value and shorten wavelength, by forming, on both sides of a quantum well active layer, a barrier layer in which the tunnel effect of electron is realized, and generating the tunnel resonance of injected electron. CONSTITUTION:On both sides of a quantum well active layer 1, a barrier layer 2 is formed whose thickness is available for the tunnel effect of electron, and on both sides thereof clad layers 3 are formed. In the case where the active layer 1 is a GaAs layer of 70Angstrom thickness, and the barrier layer 2 is an AlAs layer, the suitable range of the barrier width is 10Angstrom -30Angstrom , and AlXGa1-XAs(x 0.30) layer is suitable for the clad layer 3. When a current is injected from the clad layer 3 to a laser device of such a structure, the tunnel resonance generates between both barriers 2, and the probability that electrons exist in the well increases. Consequently, the injected current can be effectively concentrated at a level of n=1, so that the threshold level is decreased and the wavelength is shortened.
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