| 摘要 |
PURPOSE:To give anisotropy to the transmission of a light in the titled resist and to form a fine resist pattern with high accuracy by using the orientation resist which contains a polymer, a crystal of an org. material and a photosensitive group, and is orientated in the direction perpendicular to a substrate. CONSTITUTION:The titled resist contains the polymer, the crystal of the org. material and the photosensitive group and is orientated in the direction perpendicular to the substrate. Namely, the resist pattern is formed by applying the resist contg. the crystal of the org. material on the substrate, followed by orientating the obtd. resist by annealing it, and subsequently, by forming a pattern latent image in the resist by irradiating the light, followed by developing it. As a light waveguide caused by the difference of reflex index with respect to an incident light is formed in the resist by using the orientation resist, the spread of the light within the resist and the scattering of the light on the surface of the substrate are reduced, thereby forming the fine resist pattern with the high accuracy. |
