SETT ATT FRAMSTELLA KISELMATERIAL

摘要

The oxygen rich silicon, for example, made by the Czochralski method, is irradiated with electrons having an energy of at least 0.4 MeV. The irradiated material is heat treated at 275-350 deg.C for 1-100 hours and then at 450-500 deg.C for at least 75 hours. Pref. the acceleration energy of the electrons is chosen so as to cause vacancies to a predetermined depth in the irradiated material. The first heat treatment is at 300 +/- 10 deg.C. for 35 +/- 10 hours and the second heat treatment is at 475 +/- 10 deg.C.. (Provisional Basic previously advised in week 8833).