METHOD AND DEVICE FOR FORMING THIN FILM

摘要

PURPOSE:To form various thin films having uniform quality and thickness at a high speed with good reproducibility with a thin film forming device having a film forming chamber provided with a plasma generating chamber and a substrate, by controlling the spacing between the plasma generating chamber and the substrate to a specified spacing and forming the films. CONSTITUTION:The film forming chamber 1 having the plasma generating chamber 4 and the substrate 3 to be formed with the film is hermetically closed and after the inside thereof is evacuated to a vacuum by a vacuum pump 17, gaseous CH4 of a raw material and gaseous Ar 9 are introduced into the chamber 4. The gaseous mixture composed of CH4 and Ar is converted to plasma by a high-frequency power supply 6 and a plasma generating electrode 7 wound around the chamber 4. The spacing between the substrate 3 and the chamber 4 is controlled to specified spacing by using a gas pressure detector 10, by which the ions contg. C atoms are accelerated by a DC power supply 5 and a meshed electrode 8 toward the substrate 3 and the thin diamond-like carbon film having the uniform quality and thickness is formed at the high speed on the substrate 3.