| 摘要 |
PURPOSE:To form a vertical capacitor efficiently on the surface of an Si substrate and to make it possible to implement high density integration having a minute pattern, by forming partial walls for constituting the vertical capacitor on the surface of the Si substrate, and thereafter forming a minute pattern by selective epitaxial growing. CONSTITUTION:An SiO2 film 3 is formed on an Si substrate 4. A silicon oxide pattern 2 such as PSG, BSG and SiO2 is formed on the SiO2 film 3 by a CVD method. Then anisotropic etching is performed. The other part of poly Si 1 is removed so that the poly Si 1 is made to remain as side walls 1a on the side wall parts of the silicon oxide film pattern 2. Then, the silicon oxide film pattern 2 is removed by dry etching, and only the side walls 1a are made to remain. Selective epitaxial growing is performed on the Si substrate 4, and a P-type epitaxial layer 6 is formed. In this selective epitaxial growing, Si epitaxial growing is performed along the Si substrate since the Si substrate 4 comprises Si crystals in the upper direction from the surface of the Si substrate 4. Poly Si 7 is grown on the upper surfaces of the poly Si sides walls 1a and SiO2 films 5. |
