| 摘要 |
PURPOSE:To simplify the manufacturing process, to enhance freedom in material selection and to display excellent characteristics, by introducing a buffer layer, which facilitates the formation of a Schottky junction, between a thin film multilayer periodic structure, which is an operating layer, and a gate electrode. CONSTITUTION:An operating layer 2 and a buffer layer 3 are formed on a semi-insulating semiconductor substrate 1. A Schottky gate electrode 4 is formed on the buffer layer 3. A source electrode 5 and a drain electrode 6 are formed at the parts isolated from the Schottky electrode 4. The buffer layer 3 is varied stepwise or continuously from the operating layer to the Schottky electrode so that the composition of a compound semiconductor constituting a super lattice, which is the operating layer 2, is varied to the composition of a compound semiconductor which can readily becomes a Schottky junction. Since the buffer layer 3 like this is provided between the Schottky gate electrode 4 and the operating layer 2, the excellent Schottky junction can be formed. Since the electron mobility in the operating layer is larger than or equal to that of a conventional mixed crystal compound semiconductor, the excellent FET characteristics can be displayed.
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