| 摘要 |
PURPOSE:To prevent the deterioration of a transistor by the trap of hot carriers by forming a gate electrode with a high melting point metal or a high melting- point metallic silicide and shaping a side wall consisting of a polycrystalline silicon layer onto the side surface of the gate electrode. CONSTITUTION:N<-> type and N<+> type source-drain regions 5, 6 are formed onto a P-type semiconductor substrate 1, and a gate electrode 4 consisting of a tungsten silicide is shaped onto a section between the source-drain regions through a gate oxide film. Side walls 7 composed of polycrystalline silicon electrically connected to the gate electrode 4 are formed onto the side surfaces of the gate electrode 4. Since the gate electrode 4 and the side walls 7 are brought to the same potential in such constitution, the deterioration of a transistor can be minimized even when hot carriers 10 are trapped to the lower sections of the side walls 7.
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