| 摘要 |
PURPOSE:To contrive improvement both in the yield of production and in quality of the title semiconductor device by a method wherein the interval of the semiconductor wafers placed on a plurality of boats is made wider as going away from the end part where impurity gas is introduced. CONSTITUTION:Wafers 1a-1c are arranged sideways on quartz boats 6a-6c in such a manner that the different intervals like the wafer intervals 8a-8c as shown in the diagram will be maintained. Then, said quartz boats 6a-6c are placed on a mother boat 4 in the order of 6a-6c in such a manner that their intervals will be made wider by stages. Subsequently, the intervals of the wafers placed on the quartz boats 6a-6c are formed in such a manner that they become wider as going away from the introducing hole 5 of the sauce of impurities. The mother boat 4, with the quartz boat 6a ahead of others, is inserted into a one-side opened type furnace core tube 2 using a boat pulling- out and inserting rod 3, and impurities are diffused on the wafers 1a-1c. As a sufficiently large interval 8c is given to the wafer 1c, the irregularity of characteristics caused by said diffusion can be made small.
|
