| 摘要 |
PURPOSE:To decrease the initial setting time of data by selecting all memory cells at the initial data setting and allowing each memory cell to set initial data depending on the presence or absence of an initial data setting transistor (TR) provided selectively to each memory cell. CONSTITUTION:When a reset signal RESET goes to a 0 level and all bit selection lines 38 go to 0 level, TRs 36 for selection in all memory cells 34 are nonconductive. On the other hand, when a control signal RST reaches 1 level, a TR 37 provided selectively in a memory cell 34A is conductive. Moreover, a TR 42 is conductive and each bit line 39 is discharged to a 0 level. In this case, a capacitor 35 for data storage is discharged to 0 level via a the TR37 conductive in each cell, e.g., the cell 34A provided with the TR 37 and a 0 level data is set. Thus, the time required for initial data setting is remarkably shortened.
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