| 摘要 |
PURPOSE:To improve the mechanical adhesive properties of a protective film by selectively removing the surface of a first conductivity type HgCdTe substrate near a second conductivity type layer, forming a recessed section spreading toward a lower section and shaping the protective film onto a junction section between the first conductivity type HgCdTe substrate and the second conductivity type layer form the surface of the recessed section. CONSTITUTION:An n-type impurity is implanted selectively to the surface of a HgCdTe substrate 11 having a first conductivity type such as a p-type to form an n-HgCdTe layer 12. The surface of the substrate 11 is removed selectively, using a resist film 13 shaped onto the surface of the substrate 11 as a mask, the substrate is turned under the state in which the substrate is tilted in the direction of flight 32 of ion beams-the so-called 'precession' is conducted, and at least one wedge-shaped recessed section 15, corner sections 16 of which are scooped out, is shaped near the n-HgCdTe layer 12. The resist film 13 is gotten rid of, and an SiNx film 17 is formed onto the surface of the substrate 11 by a gas such as N2 and SiH4 gas. Accordingly, the SiNx film having weak adhesion to the HgCdTe substrate is fixed firmly by the wedge-shaped recessed section 15 mechanically, thus inhibiting the peeling of the SiNx film.
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