| 摘要 |
PURPOSE:To make it possible to improve electric reliability, by making the potential of a wiring or an electrode, which is insulated from a substrate, to be a specified potential, and filling a connecting hole with plating. CONSTITUTION:A connecting hole 9 is formed. For example, an aluminum film is formed on the surfaces of an n<+> type semiconductor region 6 and a wiring 5, which are exposed in the connecting hole 9. Thus an embedded conductor layer 10 is formed. At the electric plating, the potential of a substrate 1 is made negative. The wiring 5 to be plated is connected to the substrate 1 through an opening 7 at the same potential as that of the substrate 1. The potential of plating metal is made positive. After a connecting hole 13 is formed, the wiring 5 is connected to the substrate 1 through the opening 7. An embedded conductor layer 14 comprising, e.g., an aluminum film, is formed on the surface of a wiring 11 exposed from the connecting hole 13. Then, an opening 16 is formed. The wiring 5, which is exposed at the opening 16, is cut with laser 17. Thus, the gate electrode 5, a the embedded conductor layer 10, which is connected to the electrode 5, the wiring 11, the embedded conductor layer 14 and the wiring 15 are insulated from the substrate 1.
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