| 摘要 |
PURPOSE:To form a pattern in a submicron order and to prevent a resist bridge, at a step part by forming an overhang on a final pattern forming film, making a resist pattern to remain beneath the overhang, and etching the overhang and its lower layer with the resist pattern as a mask. CONSTITUTION:With a resist pattern 7 as a mask, an etched W silicide film 1a and an amorphous Si film 2a are formed. Then the pattern 7 is removed, and a resist film 8 is coated again on the entire surface. With the film 1a as an overhang, a resist film 8a is made to remain at the side part of the film 2a. Then the films 1a and 2a are etched away by using gas plasma. With the pattern of the resist 8a as a mask, dry etching is performed, and an SiO2 film 3a, a W silicide film 4a and a polysilicon film 5a are formed beneath the resist 8a. After the resist 8a is removed, the film 3a is removed. The surface of the film 4a is exposed, and the gate electrode wiring of a transistor is completed.
|
