发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To decrease the volumetric shrinkage of an applied insulation film during the baking thereof improving its mechanical strength, by incorporating insulator particles in the applied insulation film. CONSTITUTION:For example in a bipolar LSI, a three-layered interlayer insulation film is constituted by an insulation film 11, an applied insulation film 12 and an insulation film 13. Particles 16 of an insulator such as SiO2 or Al2O3 are incorporated in the applied insulation film 12 between interconnections 101-106. Said particles 16 have a grain size of 0.1 mum or less, for example of about 0.05 mum. In this manner, volumetric shrinkage being caused during a baking process performed after the application of the applied insulation film 12 can be decreased and, hence, stress due to such a volumetric shrinkage also can be decreased. Consequently, the applied insulation film 12 is allowed to have an improved mechanical strength. In addition, the mechanical strength of the insulation film 12 can be further enhanced by the dispersing accelerating effect of the particles 16.
申请公布号 JPS63143821(A) 申请公布日期 1988.06.16
申请号 JP19860290408 申请日期 1986.12.08
申请人 HITACHI LTD 发明人 OWADA NOBUO;NEZU HIROKI
分类号 H01L21/316;H01L21/768 主分类号 H01L21/316
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