| 摘要 |
PURPOSE:To improve the integration density of a semiconductor integrated circuit device, by constituting an element isolating groove surrounding the base region of a bipolar transistor, and constituting a base electrode, which is connected to a base region in a self-aligning manner. CONSTITUTION:A collector electrode, a base electrode and an emitter electrode 13 are formed. An element isolating groove 8A surrounding a base region B of a bipolar transistor is constituted. A lead-out base electrode 8D, which is connected to the base region B in a self-aligning manner, is formed at the shoulder part of the element isolating groove 8A. Thus the area of the base region B can be reduced. The area of a first element isolating region 8 can be also reduced. The integration density of a semiconductor integrated circuit device can be improved. An embedded collector region 3 is formed so that it is in contact with an insulating film 8B of the first element isolating region 8, whose dielectric constant is small. Therefore, parasitic capacitance is decreased, and the operating speed of the semiconductor integrated circuit device can be made high.
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