| 摘要 |
PURPOSE:To improve coupling efficiency when a single-mode fiber is coupled, by providing an active layer, which is to become a light emitting region, in a V groove formed in current blocking layers, and narrowing the light emitting region at the end surface. CONSTITUTION:Mesa type grooves 9 are formed on the surface of a p-InP substrate 8 in a stripe shape. A p-InP layer 11, an n-InP layer 12 and a p-InP layer 13 are formed on the substrate 8 by a liquid phase epitaxialy method. Thus current blocking layers are formed. A V groove 10 is formed in the layers. A p-InP layer 14, a p-InGaAsP layer 15, an n-InP layer 16 and an n-InGaAsP layer 17 are formed by a liquid phase epitaxial method, and double hetero-layers are formed. The p-InGaAsP layer 15 is an active layer. The n-InGaAsP layer 17 is a cap layer. The active layer p-InGaAsP 15 is formed between the n-InP layers 12 in the V groove 10 and at a part upper than the n-InGaAsP layer 17 in the lower part of terrace, i.e., a recess part. |
