| 摘要 |
PURPOSE:To reduce pin holes and junction leakage and to prevent the deterioration of characteristics due to pinholes and partial electric short circuits, by using a crystalline transparent electrode having a large crystal diameter, and flattening the surface of the electrode. CONSTITUTION:A transparent conductor film is provided on at leads one surface of a light transmitting substrate 1. Said transparent conductor film has crystallinity characterized by an average grain diameter of 0.2mum or more and the surface flatness of 0.1mum or less. A semiconductor thin film 4 is formed on at least a part of the film 2. When the crystallinity of the transparent electrode material is improved, and the grain diameter is made larger than 0.2mum, irregularities on the surface become large. The surface is shaped into a flatness of 0.1mum or less by a flattening technology. The transparent electrode 2 becomes low in resistance, and light absorption and is suppressed in the mutual diffusion with the semiconductor material. Since the flat surface is provided, the crystallinity on the semiconductor layer 4 formed on the film 2 is improved. Therefore, deterioration of VOC and FF due to pinholes and junction leakage are not found. |
