| 摘要 |
PURPOSE:To increase integration density, and to sense the reference position of a semiconductor device precisely without trouble even when film thickness changes by forming an alignment mark region by two layers having different reflectivity. CONSTITUTION:A field oxide film 2 is shaped onto a semiconductor substrate 1 so that approximately half is buried, and an inter-layer insulating film 3a is formed so as to coat the semiconductor substrate 1 and the upper section of the field oxide film 2. A polysilicon region 10 is shaped in approximately the same area as the field oxide film 2. The whole surface of the polysilicon region 10 is coated with an inter-layer insulating film 3c. An alignment mark 4 being formed in the same layer as a redundancy fuse region 9 and composed of the conductive layer of an silicide such as molybdenum, titanium or the like is shaped onto the film 3c as shown in the figure. The whole surface of the alignment mark 4 is coated with an inter-layer insulating film 3b. Accordingly, the alignment mark 4 and the polysilicon region 10 are arranged into a semiconductor device, thus sensing a reference position 4c from the difference of reflectivities. |
