| 摘要 |
PURPOSE:To enable an object to be treated in various ways and to be treated in a particular manner in a particular part thereof in a treating chamber, by applying light intermittently to the object for heating it to adequate temperatures appropriate for respective treatments each of which is performed by supplying a treating fluid to the object heated to a predetermined temperature within the treating chamber. CONSTITUTION:A semiconductor wafer 3 positioned within a treating chamber is heated by intermittent irradiation of light 11 such as infrared radiation or the like emitted from a flashing light source 9. By changing properly the flashing cycle or duration of one lighting of the light source, the temperature of the semiconductor wafer 3 can be varied rapidly to a desired value. This makes it possible to combine as desired various treating fluids 7 with appropriate temperatures of the wafer 3. Accordingly, various treatments can be performed sequentially within the same treating chamber 1. For example, a cleaning treatment for removing a natural oxide film from the surface of the wafer by means of vapor-phase etching can be followed by the formation of thin film by means of chemical vapor-phase deposition. |
