| 摘要 |
PURPOSE:To prevent smear, etc., and to obtain a precise output signals by connecting a control electrode region to an excess-carrier removing means conducting switching operation, depending upon potential difference at both ends. CONSTITUTION:A transistor 104 is brought to an ON state by a signal phihrs to keep an output line 103 grounded, and signals phih1-phihn are output from parallel output terminals from a scanning circuit in succession. Consequently, transistors Q1-Qn are turned ON successively, and reflesh operation is performed. No voltage is applied to a capacitor electrode 17, transistors Q1-Qn are brought to an OFF state, and carriers in quantity corresponding to the illuminance of incident beams are stored in a p base region 9. When intense beams come in to store excess carriers and base potential is elevated, p-n junctions with a line Lrh at fixed voltage Ve are brought to a forward bias state, and excess carriers flow out to the line Lrh through p-n junctions between bases and emitters and p-n junctions in diodes D. |
