发明名称 SEMICONDUCTOR MANUFACTURING DEVICE
摘要 PURPOSE:To increase the energy saving, etching rate and filming speed by a method wherein a refrigeration cycle is made by connecting evaporators cooling a heat dissipation part of an etching device using gas as refrigerant or a filming device to a condenser heating a gas source while using a flon based refrigerant. CONSTITUTION:High electrolytic dissociation plasma is produced in an ion source chamber 16 containing etchant gas fed from a pipe 14 by microwave 12 from a waveguide 11 and a hollow core coil 13 to etch a specimen 19 into a specified pattern by accelerated ion 20 hitting the specimen 19. The ion source chamber 16 heated in operation and the hollow core coil 13 are provided with evaporators 22 while the pipe 14 flowing the etchant gas is provided with a condenser 23. A compressor 24, the condenser 23, a throttle valve 25 and the evaporators 22 are connected by a piping 26 to make a steam compression type refrigeration cycle using a flon based refrigerant. Through these procedures, the condenser 23 can heat the etchant gas with the calory of exhaust heat collected by the evaporators 22 plus the input of compressor 24 to save energy and resources making use of the exhaust heat. Through these procedures, the reaction speed can be accelerated to increase the etching rate.
申请公布号 JPS63144521(A) 申请公布日期 1988.06.16
申请号 JP19860292902 申请日期 1986.12.09
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ADACHI MASAAKI;TANAKA HIROYOSHI;MUKAI YUJI
分类号 H01L21/302;H01L21/205;H01L21/3065;H01L21/31 主分类号 H01L21/302
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