| 摘要 |
PURPOSE:To prevent oxidation of a tungsten silicide film and to reduce the resistance of a contact resistor and to stabilize the characteristics of a transistor, by depositing a thin polycrystalline silicon film after the tungsten silicide film is formed. CONSTITUTION:An insulating film 2 comprising a silicon dioxide film is formed by a thermal oxide film method on one main surface of a P-type single crystal silicon substrate 1. Thereafter, a polycrystalline silicon film 3, in which impurities of phosphorus and the like are doped, and a high-melting-point metal silicide film 4 (e.g., tungsten silicide:WSi2) are formed. A thin polycrystalline silicon film 5 is deposited in a laminated state. Thereafter, with photoresist as a mask, patterning is performed in a specified shape. Then, a PSG film 6 is formed by a vapor growth method. With the photoresist mask as a mask, an electrode window is formed. High temperature nitrogen treatment is performed in order to make the sloped edge of a contact hole, which is the electrode window. Then, an aluminum electrode 7 is formed in a specified shape.
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