| 摘要 |
PURPOSE:To make it possible to facilitate wiring accompanying increase of other elements, by utilizing an etching stopping layer as a wiring path through a connecting region, which is formed between the specified position of a substrate and the etching stopping layer, and a conductive diffused region, which is formed between the specified position of the substrate and any of terminals. CONSTITUTION:High concentration boron ions are implanted into a diffused lead part 9a, which is connected to an Al pad 7, and a diffused lead part 9b, which is connected to a strain gage resistor 62. P<++> type wirings 11a and 11b are formed to a depth of an etching stopping layer 2. Wiring is provided along the following path: the Al pad 7 the diffused lead part 9a the P<++> wiring 11a the etching stopping layer 2 P<++> the P<++> type wiring 11b the diffused lead part 9b the strain gage resistor 62. Thus a part between the Al pad 7..., which is provided at one end of the substrate 4, and the strain gage resistor part and the like can be readily wired by utilizing the etching stopping layer 2 as a back surface wiring. When a temperature sensor is added, the design of the wiring pattern can be simplified.
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