| 摘要 |
PURPOSE:To reduce the generation of dust at the time of programming, and to improve reliability by forming a two-terminal element becoming conductive through breakdown of an insulating film by voltage higher than a fixed value applied between two electrodes. CONSTITUTION:An insulating film 13 in thickness, in which the tunneling effect can be ignored, and a first electrode consisting of an n-type diffusion layer 14 and a second electrode composed of a polycrystalline silicon layer 15 each shaped onto both surfaces of the insulating film 13, holding the insulating film are formed. An Al wiring layer 17 connected to the n-type diffusion layer 14 is grounded, voltage at a value such as 20V is applied to an Al wiring layer 18 connected to the polycrystalline silicon layer 15, and the insulating film 13 made up of a gate oxide film is broken, thus making the first and second electrodes conductive. Consequently, two kinds of lines or rows can be specified by using n two-terminal elements. The specified lines or rows are replaced with spare lines or rows, thus constituting a redundancy circuit.
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