| 摘要 |
PURPOSE:To prevent the oxidation of a bonding surface while obtaining high adhesive strength by bonding a semiconductor element and a metallic small wire by using the same conductive paste when the element and the small wire are each connected onto a lead frame made of a metal with a semiconductor element loading surface and a metallic small-wire connecting surface for drawing out an element electrode. CONSTITUTION:When a lead frame 11 with a loading surface for a semiconductor chip 13 and connected surfaces for metallic small wires 15 for drawing out an electrode for the chip 13 is prepared by punching one Cu alloy plate, plating, etc. are not executed previously after a punching. The chip 13 and the Au small wires 15 are die-bonded with surfaces with the chip 13 and the Au small wires 15, but conductive paste 16 such as Ag paste is applied previously on these surfaces in uniform thickness. The chip 13 is loaded on the loading surface, the frame 11 is heated at 250-300 deg.C to solidify the paste 16, one ends of the Au small wires 15 are thermocompression-bonded with loading surfaces for the small wires, and the other ends are soldered with an electrode in the chip 13. Accordingly, the plating of the precious metals is unnecessitated. |
