MIM-diode having mixed oxide insulator.

摘要

A MIM diode (10) has an insulator (14) with a maximum thickness of 80 nm and comprising a mixture of tantalum oxide and another oxide, such as aluminum oxide or silicon oxide. The mixture has a lower leakage current and higher non-linearity than an insulator comprising pure tantalum oxide. The other oxide can be between about 10-70 average mole percent of the insulator. The minimum thickness can be about 35 nm to prevent pinholes.