| 摘要 |
PURPOSE:To increase inner aluminum in grain boundary or to form a state completely free of grain boundary by quickly heating or cooling a wiring- patterned aluminum layer to form only the surface and the sidewall of the aluminum wiring layer in an amorphous state. CONSTITUTION:Aluminum wiring-patterned semiconductor substrate is placed in a reduced pressure inert gas atmosphere on a high concentration semiconductor layer. Then, free carrier absorption is executed by using infrared ray of long wavelength for the semiconductor layer of a semiconductor substrate 1 and aluminum wirings, only the aluminum layer is heated to quickly heat it to the vicinity of the melting point 1 of the aluminum (approx. 650 deg.C). Since the long wavelength is used, the substrate is not substantially accelerated. When the heating is stopped, inert gas is simultaneously sprayed to the substrate to rapidly cool it to room temperature 2. The time required for this quick heating and rapid cooling is approx. 1 sec. Since only the surface of the aluminum wirings and the sidewall are formed in an amorphous state, high current density resistance can be improved while high purity aluminum wirings remain unchanged.
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