| 摘要 |
PURPOSE:To prevent a P-N junction from being damaged in case of forming a PSG film on a top layer by means of plasma processing by a method wherein, in an IC with a P-N junction comprising a source and a drain on the surface with the periphery of an Si substrate resin sealed, a conductive metallic layer covering overall region of a P-N junction is provided on the upper part of the substrate. CONSTITUTION:An SiO2 film 4 is formed on the periphery of a P type Si substrate 1 by means of selective oxidation and the surface of the substrate 1 exposed between them is coated with a laminated layer 3 made of SiO2 and Si3N4. Next, an opening is made in the film 3 and an N type source region 2a and a drain region 2b are diffusion-formed in the substrate 1 to provide a gate electrode 5 made of polycrystalline Si between them while the regions 2a and 2b are coated with polycrystalline Si film 6. Later overall surface including them is covered with a PSG film 8 and another PSG film 10 is deposited thereon by means of plasma CVD process. At this time, an Al wiring layer 9 may be formed on the film 8 upon a P-N junction to prevent any unfavorable effect upon the junction from occurring. |
