发明名称 MATERIAL FOR FORMING MAGNETORESISTANCE EFFECT FILM
摘要 PURPOSE:To obtain a magnetic sensor whose characteristic is uniform and whose readout output is high by a method wherein the amount of oxygen contained in a material for vacuum evaporation or the material for a sputtering target film is kept to be less than a prescribed value. CONSTITUTION:The concentration of oxygen contained in a material used to form a film is kept to be less than 20 ppm. The material for formation of the film is melted and the amount of oxygen contained is measured. An element whose amount corresponds to this amount of oxygen and which is hardly dangerous to deteriorate a magneto resistance effect, preferably Al, Si, Co or the like individually, or a combination of two or more of said element, is added. The oxygen contained in the material, for formation of the film, which is melted by this addition is separated in the form of an oxide. It is better to remove this oxide. The element whose amount is sufficient to transform the total amount of oxygen measured into the oxide is added to the oxygen so as to keep the amount of oxygen in the material for formation of the film to be less than 20 ppm. A ferromagnetic magnetoresistance effect film of uniaxial anisotropy is formed by using an alloy of NiFe and NiCo by an evaporation method from an evaporation source of a prescribed compound or by using a target of the prescribed compound by means of a sputtering method.
申请公布号 JPS63142689(A) 申请公布日期 1988.06.15
申请号 JP19860288845 申请日期 1986.12.05
申请人 HITACHI LTD;HITACHI METALS LTD 发明人 MITSUOKA KATSUYA;KUMAGAI AKIRA;NARUSHIGE SHINJI;HANAZONO MASANOBU;YOSHINARI AKIRA;FUJII NORIHISA;KODAMA HIDEYO;SAKAKIBARA MASAHIKO
分类号 H01L43/10;G11B5/39 主分类号 H01L43/10
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