| 摘要 |
PURPOSE:To prevent the reduction of an element forming region by a bird-beak- shaped oxide film and the lateral extension of a channel stopper, and to improve the area utilization efficiency of an element by selectively shaping a compound layer to the surface of a semiconductor substrate and forming an insulating region containing the channel stopper, using the compound layer as a mask. CONSTITUTION:A P-type silicon substrate 1 is thermally oxidized, and an oxide film 2 is shaped to the surface. The oxide film 2 is removed selectively to expose the surface of the silicon substrate 1, and a metallic layer 3 is formed onto the exposed surface. The metallic layer 3 and the silicon substrate 1 are reacted through heat treatment, and a metallic silicide layer 4 is shaped onto the surface. The metallic silicide layer is not formed onto the oxide film 2 at that time. The metallic layer 3 on the oxide film 2 is removed, and boron ions are implanted, employing the metallic silicide layer 4 as a mask to shape a P<+> type channel stopper 5 to the silicon substrate 1 under the oxide film 2. Lastly, the metallic silicide layer 4 is gotten rid of, and a gate oxide film 6 and a gate 7 are shaped onto the surface of the silicon substrate 1 in succes sion.
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