| 摘要 |
PURPOSE:To form a film whose thickness is highly uniform and to form a thin film with good controllability by a method wherein the ambient temperature of a substrate is set at a value which is higher than the temperature for the formation of the film while a reaction gas is supplied after the ambient temperature has been lowered from the high temperature to the temperature value for the formation of the film. CONSTITUTION:Prior to an oxidation process, the temperature inside a heat- treatment furnace is set at a value which is higher than the temperature for the oxidation process. After the temperature inside the heat-treatment furnace has been lowered to the value for the oxidation process, the process is executed. If the oxidation process is executed for 5 min by supplying O2 at the rate of 9l/min, the thickness of a film in the central part of an Si substrate is almost uniform. The thickness of the film at the peripheral region of the Si substrate is thin. Accordingly, the uniformity of the film is good.
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