| 摘要 |
PURPOSE:To enable the switching of a high frequency signal by grounding the gate of an FET for switching, setting a drain as an output in the case of outputting, or setting a source as an input in the case of inputting, changing the source voltage on an input side so as to execute switching actions and switching on the FET for switching if an impressed voltage on a source side is low electric potential. CONSTITUTION:If a DC control voltage impressing terminal is assumed as high electric potential, and 13 is assumed as low electric potential, the FET 21 turns off and the FET 22 turns on and if the DC control voltage impressing terminal 12 is made low electric potential and 13 is made high electric potential, the FET 21 turns on and the FET 22 turns off. Thus, the switching of one input signal is executed with two elements of an FET and a resistance and the gate of the FET is grounded so as to constitute a circuit, so that the loss of high frequency is made small and an input/output isolation can be made high. The circuit is suitable for switching and integrating a large number of wide band input signals and balanced input high frequency signals.
|
