| 摘要 |
PURPOSE:To form a low resistance epitaxial thin film of II-VI compound controlled in its conductivity type which cannot be heretofore obtained by using a manufacture for controlling the supplying amount, growth temperature, growth pressure and total flow rate of a material to be supplied. CONSTITUTION:An epitaxial thin film of the structure having a P-N junction of zinc selenide is manufactured by an metal organic vapor phase expitaxial growth (MOVPE) system. Zn exhibits vapor pressure of 1.3X10<-3> Torr and Se exhibits vapor pressure of 9.7X10<-2> Torr at 300 deg.C of growth temperature. When the growth pressure of manufacturing condition is 70 Torr and total flow rate is 5l/mm, in case of 4.1X10<-6> mol/mm of Zn source and 3.1X10<-4> mol/mm of Se source, the supplying amount coincides with the previous vapor pressure. Accordingly, the Zn source is supplied in the amount at the vapor pressure or more of Zn even when both N-type and P-type zinc selenides are manufactured, the Se source is supplied in the amount at the vapor pressure of Se or less when N-type zinc selenide is manufactured, and it is supplied in the amount at the vapor pressure or less of the Se when P-type since selenide is manufactured.
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