| 摘要 |
PURPOSE:To accurately control a composition without fluctuation in temperature due to no shutter being used by rotatably providing a substrate holder, and rotating the holder thereby to selectively irradiate a molecular beam from a specific deposition source crucible. CONSTITUTION:Since a molecular beam has good linear propagation, when the angle of a crucible and the angle of a substrate holder 2 are suitably selected, the conditions that Be is not irradiated to a substrate 3 to which an Si molecular beam is irradiated and Si is not radiated to the substrate 3 to which the Be molecular beam is irradiated can be satisfied. In this case, n-type and p-type grown films are formed on the substrate 3. Here, when the holder 2 is rotated, the Si molecular beam and the Be molecular beam are alternately irradiated to the substrate 3 to form a doping superlattice. In this case, when the rotating speed is controlled, a plurality of the superlattices of arbitrary thickness are formed simultaneously.
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