| 摘要 |
<p>PURPOSE:To improve a yield by forming a smooth layer only by coating of a transparent acrylic resin on a solid state image pickup device, then providing a dyed layer of a water soluble resist then an intermediate layer of a transparent acrylic resin and further the 2nd dyed layer thereon. CONSTITUTION:Photodiodes 2 are formed at a prescribed pitch on the surface of a semiconductor substrate 1. An insulating film 3, a PSG film 4 and an Al light shielding film 5 opened with the diode parts 2 are formed thereon. The smooth layer 6 consisting of the acrylic resin is then formed thereon to 2mum thickness. A casein resist 20 contg. 1% ammonium dichromate is coated on the smooth layer 6 and is exposed by a mercury lamp after baking so that the casein resist layer is left only on the region of the prescribed photosensitive region. The layer is then dyed with a cyan dyeing liquid and is dried to form the cyan dyed layer 7. An intermediate layer 8 which is a color mixing preventive film is formed thereon. After the yellow dyed layer 9 is further formed, a silicon copolymer resist is coated thereon and is subjected to UV exposing after baking. The polymerized resist is developed by a developing soln. and only the bonding pad parts 11 and dividing lines 12 are etched so that the resist 30 is patterned over the entire surface of the element.</p> |
