发明名称 Method and apparatus for ion etching.
摘要 <p>Apparatus for use in treating semiconductor wafers or other work pieces by an active ion technique or by chemical vapour deposition, comprising a "vacuum" chamber having means for connection to an evacuating pump and to a source of the selected gas, an induction coil surrounding part of the chamber and connected to an alternating current supply to create a plasma within the chamber containing ionised elements of the gas, a support for the work piece within the chamber, and means for creating an electric field between the support and part of the chamber where the plasma exists.</p>
申请公布号 EP0271341(A2) 申请公布日期 1988.06.15
申请号 EP19870310878 申请日期 1987.12.10
申请人 DOBSON, CHRISTOPHER DAVID 发明人 KEEBLE, FRANK
分类号 H01L21/302;H01J37/32;H01L21/205;H01L21/3065;H01L21/31 主分类号 H01L21/302
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