| 摘要 |
High melting oxide single crystals mfe. free from dislocations and stresses Modified Verneuil technique for the production of high melting oxide or oxide mixture, stress and dislocation free, single crystals, partic. Mg-Al spinners as substrate discs for the deposition of epitaxial layers of semi-conductor material, e.g. silicon, in which in known manner the finely divided oxide powder is brought into contact with the heated or molten top of a support crystal on which it is cooled and crystallised by moving the support out of the heating zone at a speed determined by the rate of fusion of the oxide powder, incorporating the modification comprising the use of a furnace for growing the crystal, having a relatively large axial temp. gradient and a relatively low radial temp. gradient, set up by laterally deflecting the hot flames directly below the growing front of the crystal being grown on the substrate crystal by means of a gas deflector enclosing the grown crystal with dimensions corresponding to the growing crystal. |
